Microstructure characterization of hot-pressed β-silicon nitride containing β-Si₃N₄ seedsBO WANG; JUN YANG; RUI GUO et al.Materials characterization. 2009, Vol 60, Num 8, pp 894-899, issn 1044-5803, 6 p.Article

Low-temperature formation of silicon nitride films using pulsed-plasma CVD under near atmospheric pressureMATSUMOTO, M; INAYOSHI, Y; SUEMITSU, M et al.Applied surface science. 2008, Vol 254, Num 19, pp 6208-6210, issn 0169-4332, 3 p.Conference Paper

Hard and relaxed a-SiN_xH_y films prepared by PECVD: Structure analysis and formation mechanismXIANGDONG XU; QIONG HE; TAIJUN FAN et al.Applied surface science. 2013, Vol 264, pp 823-831, issn 0169-4332, 9 p.Article

Key technique for texturing a uniform pyramid structure with a layer of silicon nitride on monocrystalline silicon waferHUANG, Bohr-Ran; YANG, Ying-Kan; YANG, Wen-Luh et al.Applied surface science. 2013, Vol 266, pp 245-249, issn 0169-4332, 5 p.Article

The effect of argon plasma treatment on the permeation barrier properties of silicon nitride layersMAJEE, S; CERQUEIRA, M. F; TONDELIER, D et al.Surface & coatings technology. 2013, Vol 235, pp 361-366, issn 0257-8972, 6 p.Article

Deposition and characterization of low temperature silicon nitride films deposited by inductively coupled plasma CVDKSHIRSAGAR, Abhijeet; NYAUPANE, Pradeep; BODAS, Dhananjay et al.Applied surface science. 2011, Vol 257, Num 11, pp 5052-5058, issn 0169-4332, 7 p.Article

The influence of N ion bombardment on the properties of PET surface and SiN_X/PET complexWANYU DING; OKABE, Yoshio; WEIPING CHAI et al.Surface & coatings technology. 2011, Vol 205, Num 23-24, pp 5318-5323, issn 0257-8972, 6 p.Article

Joining of silicon nitride using coating technologyTATLI, Z; THOMPSON, D. P.Surface & coatings technology. 2006, Vol 200, Num 9, pp 3078-3083, issn 0257-8972, 6 p.Article

Covalent functionalization of silicon nitride surfaces by semicarbazide groupCOFFINIER, Yannick; BOUKHERROUB, Rabah; WALLART, Xavier et al.Surface science. 2007, Vol 601, Num 23, pp 5492-5498, issn 0039-6028, 7 p.Article

Effect of microstructural orientation on erosion behavior of self-reinforced silicon nitrideLIM, D.-S; CHO, C.-H; PARK, D.-S et al.Wear. 2003, Vol 255, Num 1, pp 110-114, issn 0043-1648, 5 p.Conference Paper

Ellipsometric characterization of inhomogeneous non-stoichiometric silicon nitride filmsNECAS, David; FRANTA, Daniel; OHLIDAL, Ivan et al.Surface and interface analysis. 2013, Vol 45, Num 7, pp 1188-1192, issn 0142-2421, 5 p.Article

Friction and wear of pressureless sintered Ti(C, N)-WC ceramicsYUN, Shin-Sang; HAN, Byoung-Dong; PARK, Dong-Soo et al.Wear. 2003, Vol 255, Num 1, pp 682-685, issn 0043-1648, 4 p.Conference Paper

Study of SiN_x films used as protective layer on Ni film flow sensorsJUN XU; TIANMIN SHAO; RONG ZHU et al.Surface & coatings technology. 2014, Vol 253, pp 38-43, issn 0257-8972, 6 p.Article

Effects of hydrogen on photoluminescence properties of a-SiN_x:H films prepared by VHF-PECVDCHAO SONG; RUI HUANG; XIANG WANG et al.Applied surface science. 2011, Vol 258, Num 4, pp 1290-1293, issn 0169-4332, 4 p.Article

Nanodiamond-based tribosystemsAMARAL, M; ABREU, C. S; FERNANDES, A. J. S et al.Surface & coatings technology. 2010, Vol 204, Num 12-13, pp 1962-1969, issn 0257-8972, 8 p.Conference Paper

Effects of seeding and amounts of Y₂O₃:Al₂O₃ additives on grain growth in Si₃N₄ ceramicsBELMONTE, M; DE PABLOS, A; OSENDI, M. I et al.Materials science & engineering. A, Structural materials : properties, microstructure and processing. 2008, Vol 475, Num 1-2, pp 185-189, issn 0921-5093, 5 p.Article

18.5% efficient AIO_x/SiN_y rear passivated industrial multicrystalline silicon solar cellsQI QIAO; HONGYAN LU; JIAN GE et al.Applied surface science. 2014, Vol 305, pp 439-444, issn 0169-4332, 6 p.Article

Nanoscale friction of partially oxidized silicon nitride thin filmsFILLA, J; AGUZZOLI, C; SONDA, V et al.Surface & coatings technology. 2011, Vol 205, Num 19, pp 4528-4531, issn 0257-8972, 4 p.Article

Characterization of porous silicon nitride ceramics using bentonite as binder and sintering additiveJIANG, Guang-Peng; YANG, Jian-Feng; GAO, Ji-Qiang et al.Materials characterization. 2009, Vol 60, Num 5, pp 456-460, issn 1044-5803, 5 p.Article

Thermal, mechanical and fretting fatigue of silicon nitrideSCHWIND, Thomas; SCHALK, Thomas; KERSCHER, Eberhard et al.International journal of materials research. 2008, Vol 99, Num 10, pp 1090-1097, issn 1862-5282, 8 p.Article

Fatigue behavior of hybrid ceramic ball bearings in liquid nitrogen©GU, L; WANG, L; JIN, Y et al.Tribology transactions. 2003, Vol 46, Num 4, pp 494-498, issn 1040-2004, 5 p.Article

Tensile testing at the micrometer scale: Opportunities in experimental mechanicsSHARPE, William N.Experimental mechanics. 2003, Vol 43, Num 3, pp 228-237, issn 0014-4851, 10 p.Article

Low temperature SiN_x:H films deposited by inductively coupled plasma for solar cell applicationsZHOU, H. P; WEI, D. Y; XU, L. X et al.Applied surface science. 2013, Vol 264, pp 21-26, issn 0169-4332, 6 p.Article

Tribological and cutting behavior of silicon nitride tools coated with monolayer-and multilayer-microcrystalline HFCVD diamond filmsNAICHAO CHEN; BIN SHEN; GUODONG YANG et al.Applied surface science. 2013, Vol 265, pp 850-859, issn 0169-4332, 10 p.Article

N₂-plasma nitridation on Si( 111 ): Its effect on crystalline silicon nitride growthWU, Chung-Lin; CHEN, Wei-Sheng; SU, Ying-Hung et al.Surface science. 2012, Vol 606, Num 15-16, issn 0039-6028, L51-L54Article